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Selected Sections and Technology of Semiconductors and Dielectrics
Major: Applied Physics and Nanomaterials
Code of subject: 8.105.00.M.023
Credits: 3.00
Department: Applied Physics and Nanomaterials Science
Lecturer: D.Sc., Prof. Ilchuk H.A.
D.Sc., Prof. Krukovskyi S.I.
D.Sc., Prof. Andrushchak A.S.
D.Sc., Prof. Malyk O.P.
Semester: 4 семестр
Mode of study: денна
Learning outcomes: 1. Ability to demonstrate in-depth knowledge in the chosen field of research.
2. Ability to demonstrate an understanding of the impact of technical solutions in the social, economic and social context.
3. Search, analyze and critically evaluate information from various sources.
4. Apply knowledge and understanding to solve problems of synthesis and analysis of elements and systems characteristic of the chosen field of research.
5. Investigate and model phenomena and processes of varying complexity in solving problems of nanomaterials.
6. Apply a systematic approach, integrating knowledge from other disciplines and taking into account non-technical aspects, when solving theoretical and applied problems of the chosen field of research.
7. To combine theory and practice, as well as to make decisions and develop a strategy for solving scientific and applied problems, taking into account universal values, social, state and industrial interests.
8. Work effectively both individually and as a team.
9. Using the acquired research skills, the ability to independently conduct experimental research.
10. Evaluate the feasibility and feasibility of new methods and technologies in the synthesis of nanomaterials and solving problems of applied physics.
11. Ability to independently conduct research and make decisions.
Required prior and related subjects: Previous disciplines:
1. Technology and Physics of Electronics and Spintronics Nanostructures.
2. Modern Methods of Physical Research
Related and subsequent disciplines
1. Physical Processes Simulation
2. Physics of Condenced State and Quantum-Dimensional Systems
Summary of the subject: According to its logical construction, the course can be divided into four parts. In the first part the physicochemical bases of formation of quantum-dimensional structures of semiconductor compounds by the method of MOS-hydride epitaxy are consistently stated. The method of layer-by-layer deposition of semiconductor materials, as well as the method of crystallization of semiconductor submicron layers and nanosized objects by the method of liquid-phase epitaxy are covered separately. The description of the instrument structures received with use of modulation of technological parameters is presented. The second part of the course presents a method for calculating the equilibrium composition of the vapor phase and mass transfer in gas-phase systems during the cultivation of AIIBVI compounds. The issue of growth conditions of crystals of AIIBVI compounds in terms of vapor phase composition and mass transfer rate is covered separately. The third part of the course is devoted to the study of induced (electro-, piezo- and acousto-) optical effects and their spatial anisotropy in crystalline materials. Experimental settings and corresponding methods of research of these effects are considered. The propagation and measurement of acoustic wave velocities in anisotropic media based on the solution of the Christoffel equation are covered. The fourth part of the course considers the kinetic properties of AIIBVI and AIIIBV crystals. A method for the exact solution of the Boltzmann kinetic equation for a semiconductor with an isotropic dispersion law of charge carriers is presented. Modern models of charge carrier scattering on the near - operating potential of crystalline defects of different nature are highlighted, and their comparison with existing long - range scattering models in the relaxation time approximation is carried out.
Assessment methods and criteria: Current control (40%): oral questioning, presentations at seminars, tests, individual written work. - The final test (60%): exam.
Recommended books: 1. Tayrov Yu. M., Tsvetkov V. F. Tekhnolohyia poluprovodnykovыkh y dyэlektrycheskykh materyalov: Uchebnyk dlia vuzov. 3-e yzd., ster. — SPb.: Yzdatelstvo «Lan», 2002.— 424 s.
2. Pod red. L. Maisela, R. Hlenha. Niu-York. 1970. Per. s anhl. Pod red. M.Y. Elysona, H.H. Smolko, Tekhnolohyia tonkykh plenok T.1. – M.: “Sov. radyo”, 1977. – 664 s.
3. Pod red. L. Maisela, R. Hlenha. Niu-York. 1970. Per. s anhl. Pod red. M.Y. Elysona, H.H. Smolko, Tekhnolohyia tonkykh plenok T.2. – M.: “Sov. radyo”, 1977. – 768 s.
4. Aleksandrov S. E., Hrekov F. F. Tekhnolohyia poluprovodnykovыkh ma-teryalov: Uchebnoe posobye. 2'e yzd., yspr. — SPb.: Yzdatelstvo «Lan», 2012. — 240 s.
5. Antonenko S.V. Tekhnolohyia tonkykh plenok: Uchebnoe posobye. M.: MYFY, 2008. – 104 s.
Selected Sections and Technology of Semiconductors and Dielectrics
Major: Applied Physics and Nanomaterials
Code of subject: 8.105.00.M.022
Credits: 3.00
Department: Semiconductor Electronics
Semester: 4 семестр
Mode of study: денна
Selected Sections and Technology of Semiconductors and Dielectrics
Major: Applied Physics and Nanomaterials
Code of subject: 8.105.00.M.021
Credits: 3.00
Department: General Physics
Semester: 4 семестр
Mode of study: денна