Physics of Semiconductors and Dielectrics, Part 2

Major: Micro and Nanosystems of the Internet of Things
Code of subject: 6.153.03.E.049
Credits: 6.00
Department: Semiconductor Electronics
Lecturer: Orest Malyk, Ph.D., Professor
Semester: 5 семестр
Mode of study: денна
Мета вивчення дисципліни: The purpose of studying the discipline: The purpose of studying the educational discipline is to form students' knowledge of the basic laws and phenomena underlying the physical properties of semiconductors and dielectrics, which are used in the design of micro- and nanosystem technology devices. The material taught in this discipline is necessary for the practical activities of both a student, when mastering future courses, and a bachelor's specialist in the specialty "Micro- and Nanosystem Engineering".
Завдання: Tasks: Formation and development of competences: General: basic knowledge of fundamental sciences, to the extent necessary for mastering general professional disciplines; basic knowledge in the field of micro- and nanosystem engineering, necessary for mastering professionally oriented disciplines; the ability to solve tasks and make appropriate decisions; the ability to analyze and synthesize, to apply knowledge in practice; the ability to search and analyze information from various sources; have research skills; . the ability to work both individually and in a team. Specialists: basic knowledge of scientific concepts, theories and methods necessary for understanding the principles of operation and functional purpose of devices and devices of micro- and nanosystem technology; basic knowledge of the main regulatory and legal acts and reference materials, current standards and technical conditions, instructions and other regulatory documents in the field of "Automation and Instrumentation"; the ability to use knowledge and skills for calculation, research, selection, implementation, repair, and design of devices and devices of micro- and nanosystem technology and their components; the ability to develop methods of assessing the quality of materials of micro- and nanosystem technology, methods of testing devices and devices, metrological verification systems; the ability to argue the choice of methods for solving specialized problems, critically evaluate the obtained results and defend the decisions made.
Learning outcomes: Learning outcomes: Learning outcomes in accordance with the educational program, learning and teaching methods, methods of evaluating the achievement of learning outcomes. As a result of studying the academic discipline, the student must be able to demonstrate the following learning outcomes: knowledge and understanding of basic physical processes and phenomena in semiconductors, dielectrics, as well as magnetic and optical materials for micro- and nano-system technology devices; knowledge and skills regarding experiments, data collection and modeling of devices and devices of micro- and nanosystem technology; the ability to perform appropriate experimental research and apply research skills on professional topics; the ability to evaluate the obtained results and justify the decisions made. As a result of studying the academic discipline, the student must be able to demonstrate the following program learning outcomes: - the ability to demonstrate knowledge and understanding of basic physical processes and phenomena in semiconductors, dielectrics, as well as magnetic and optical materials for devices of micro- and nano-system technology; - the ability to demonstrate knowledge of the basics of professionally oriented disciplines in the field of micro- and nanosystem engineering, the basics of automation, information technologies of system analysis, efficient energy use; – the ability to demonstrate knowledge and skills in conducting experiments, data collection and modeling devices and devices of micro- and nanosystem technology; - the ability to demonstrate knowledge and understanding of design methodologies, relevant regulatory documents, current standards and technical conditions; - the ability to apply knowledge and understanding to identify, formulate and solve technical problems of the specialty, using known methods; - the ability to apply knowledge and understanding to solve problems of synthesis and analysis in devices and devices of micro- and nanosystem technology; - the ability to think systematically and apply creative abilities to the formation of fundamentally new ideas; - the ability to search for information in various sources to solve specialty problems; - the ability to identify, classify and describe the operation of systems and their components; - the ability to combine theory and practice, as well as to make decisions and develop an activity strategy to solve the problems of micro- and nanosystem technology, taking into account general human values, public, state and industrial interests; - the ability to perform relevant experimental studies and apply research skills on professional topics; - the ability to evaluate the obtained results and justify the decisions made; - the ability to realize the need for lifelong learning with the aim of deepening the acquired and acquiring new professional knowledge.
Required prior and related subjects: Previous educational disciplines: quantum mechanics and statistical physics, part 1 and 2; physics of semiconductors and dielectrics, part 1. Accompanying and subsequent educational disciplines: solid-state electronics, part 1; solid-state electronics, part 2.
Summary of the subject: Brief content of the educational program: The educational discipline examines the main physical phenomena in semiconductors and dielectrics and the laws that describe them, and which find practical application in devices of micro- and system engineering.
Опис: Brief description of the educational discipline: Dependence of the Hall coefficient on the magnetic field. Magnetoresistive effect. Thermal conductivity of semiconductors. Thermoelectric and thermomagnetic phenomena in semiconductors. Tensoresistive effect. Fundamentals of the quantum theory of transitions. Scattering on ionized and neutral impurities. Lattice oscillations. Phonons. Statistics of phonons. Types of crystal lattice oscillations. Scattering by lattice oscillations. Continuity equation. Life time of charge carriers. Mechanisms of recombination. Linear recombination. Diffusion and drift of nonequilibrium charge carriers. Debye shielding length. Exit work. Contact potential difference. Contact "metal - metal". Metal-semiconductor contact. Light absorption spectrum. Light absorption by free charge carriers and lattice. Intrinsic absorption of light. Absorption of light by electrons in localized states. Photoresistive effect. Dember effect. Photogalvanic effect. Photomagnetic effect. Faraday effect.
Assessment methods and criteria: Methods of assessing the level of achievement of learning outcomes. Current and examination control. Knowledge assessment methods: selective oral survey; speeches at seminars, tests, colloquium, assessment of activity, submitted proposals, original solutions, clarifications and recognitions, etc., according to evaluations of the performance of laboratory work. The exam is a written and oral survey.
Критерії оцінювання результатів навчання: Evaluation criteria for learning outcomes: Evaluation methods and criteria: - current control (written reports on laboratory work, control works), 28%; - exam (written and oral form), 72%. Theoretical questions and tasks that require the ability to apply the acquired knowledge to determine the properties of semiconductors and dielectrics are submitted to the examination control. Current control is carried out by the method of knowledge control during the performance and protection of laboratory works, when solving problems in the classroom and based on the results of control works.
Recommended books: Recommended literature: 1. I. M. Bolesta. Solid state physics. Lviv National University named after Ivan Franko. – L.: Publishing center of LNU named after Ivan Franko, 2003. - 479 p. 2. V.V. Bibik, T.M. Hrychanovska, L.V. Odnodvorets, N.I. Shumakova. Solid state physics: edited by Prof. Assessment of I.Yu. – Sumy: Publishing House of Sumy State University, 2010. - 200 p. 3. J.M. Ziman. Principles of the theory of solids. Cambridge University Press. 1972. 471 P. 4. C.A. Wert, R.M. Thompson. Physics of solids. McGraw-Hill. New York- San Francisko-Toronto-London. 1964. 558 P. 5. J.S. Blackmore. Solid state Physics. Cambridge University Press. Cambridge–London–New York–New Rochelle– Melbourne– Sydney. 1988. 606 P. 6. C. Kittel. Introduction to Solid State Physics. 8-th edition. John Wiley & Sons, Inc. 2005. 700 P. http://metal.elte.hu/~groma/Anyagtudomany/kittel.pdf.