Physics of Semiconductors and Dielectrics (курсова робота)

Major: Micro and Nanosystems of the Internet of Things
Code of subject: 6.153.03.O.031
Credits: 2.00
Department: Semiconductor Electronics
Lecturer: Orest Malyk , Ph.D., professor
Semester: 5 семестр
Mode of study: денна
Мета вивчення дисципліни: The purpose of studying the discipline: The purpose of the course work is to acquire theoretical knowledge and deepen practical skills for calculating the kinetic properties of semiconductors, which are widely used in micro- and nanosystem technology.
Завдання: Tasks: Completion of the course work involves the formation and development of students' competencies: General: basic knowledge of fundamental sciences, in the amount necessary for mastering general professional disciplines; the ability to solve tasks and make appropriate decisions; the ability to analyze and synthesize, to apply knowledge in practice. Specialists: basic knowledge of scientific concepts, theories and methods necessary for understanding the principles of operation and functional purpose of devices and devices of micro- and nanosystem technology; the ability to develop methods for assessing the quality of micro- and nanosystem engineering materials.
Learning outcomes: Learning outcomes: Results of course work in accordance with the educational program. As a result of completing the course work, the student must be able to demonstrate the following learning outcomes: knowledge of the basic principles of calculating the position of the Fermi level in semiconductors with a given concentration of dopant; the ability to calculate specific kinetic properties of a semiconductor (specific conductivity ?, Hall coefficient R, differential thermoelectric force ?, coefficient of thermal conductivity ?e) and their dependence on temperature; the ability to assess the influence of different charge carrier scattering mechanisms on crystal lattice defects on the value of the kinetic characteristic of a semiconductor in different temperature ranges. As a result of completing the coursework, the student must be able to demonstrate the following learning outcomes: - the ability to demonstrate knowledge and understanding of basic physical processes and phenomena in semiconductors, dielectrics, as well as magnetic and optical materials for devices of micro- and nano-system technology; - the ability to demonstrate knowledge and understanding of design methodologies, relevant regulatory documents, current standards and technical conditions; - the ability to apply knowledge and understanding to identify, formulate and solve technical problems of the specialty, using known methods; - the ability to apply knowledge and understanding to solve problems of synthesis and analysis in devices and devices of micro- and nanosystem technology; - the ability to think systematically and apply creative abilities to the formation of fundamentally new ideas; - the ability to search for information in various sources to solve specialty problems; - the ability to work effectively both individually and as part of a team; - the ability to combine theory and practice, as well as to make decisions and develop an activity strategy to solve the problems of micro- and nanosystem technology, taking into account general human values, public, state and industrial interests; - the ability to perform appropriate experimental research and apply research skills on professional topics; - the ability to evaluate the obtained results and justify the decisions made; - the ability to realize the need for lifelong learning in order to deepen acquired and acquire new professional knowledge; - the ability to take responsibility for the work performed and achieve the set goal in compliance with the requirements of professional ethics.
Required prior and related subjects: Previous academic disciplines: higher mathematics, parts 1, 2, 3, quantum mechanics and statistical physics, parts 1 and 2; physics of semiconductors and dielectrics, part 1 and 2. Accompanying and subsequent educational disciplines: solid-state electronics, part 1 and 2.;
Summary of the subject: Summary of the course work: The course work calculates the temperature dependence of the kinetic characteristics of a semiconductor (specific conductivity ?, Hall coefficient R, differential thermoelectric force ? and coefficient of thermal conductivity ?e) for different charge carrier scattering mechanisms and different degrees of impurity doping.
Опис: In the first part of the coursework, the numerical solution of the electroneutrality equation is performed and the temperature course of the Fermi level is determined. The second part of the course work involves the calculation of the temperature kinetic characteristics of the semiconductor.
Assessment methods and criteria: Methods of knowledge diagnosis: current control in the form of a teacher checking parts of the course work according to the description of the stages of the course work; Final control in the form of coursework defense.
Критерії оцінювання результатів навчання: Coursework assessment criteria: Procedure and criteria for awarding points and grades: 100–88 points – (“excellent”) awarded for a high level of knowledge (some inaccuracies are allowed) of the educational material of the component contained in the main and additional recommended literary sources, the ability to analyze phenomena , which are studied, in their relationship and development, clearly, succinctly, logically, consistently answer the questions, the ability to apply theoretical provisions when solving practical problems; 87–71 points – (“good”) is awarded for a generally correct understanding of the educational material of the component, including calculations, reasoned answers to the questions posed, which, however, contain certain (insignificant) shortcomings, for the ability to apply theoretical provisions when solving practical tasks; 70 – 50 points – (“satisfactory”) awarded for weak knowledge of the component’s educational material, inaccurate or poorly reasoned answers, with a violation of the sequence of presentation, for weak application of theoretical provisions when solving practical problems; 49-26 points - ("not certified" with the possibility of retaking the semester control) is awarded for ignorance of a significant part of the educational material of the component, significant errors in answering questions, inability to apply theoretical provisions when solving practical problems; 25-00 points - ("unsatisfactory" with mandatory re-study) is awarded for ignorance of a significant part of the educational material of the component, significant errors in answering questions, inability to navigate when solving practical problems, ignorance of the main fundamental provisions.
Recommended books: Recommended literature: 1. I. M. Bolesta. Solid state physics. Lviv National University named after Ivan Franko. – L.: Publishing center of LNU named after Ivan Franko, 2003. - 479 p. 2. V.V. Bibik, T.M. Hrychanovska, L.V. Odnodvorets, N.I. Shumakova. Solid state physics: edited by Prof. Assessment of I.Yu. – Sumy: Publishing House of Sumy State University, 2010. - 200 p. 3. J.M. Ziman. Principles of the theory of solids. Cambridge University Press. 1972. 471 P. 4. C.A. Wert, R.M. Thompson. Physics of solids. McGraw-Hill. New York- San Francisko-Toronto-London. 1964. 558 P. 5. J.S. Blackmore. Solid state Physics. Cambridge University Press. Cambridge–London–New York–New Rochelle– Melbourne– Sydney. 1988. 606 P. 6. C. Kittel. Introduction to Solid State Physics. 8-th edition. John Wiley & Sons, Inc. 2005. 700 P. http://metal.elte.hu/~groma/Anyagtudomany/kittel.pdf.